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Agilent MGA-545P8 50 MHz to 7 GHz Medium Power Amplifier Data Sheet
Specifications * 3.3 V, 92 mA, 5.825 GHz at saturation mode * 22 dBm saturated power across 1-7 GHz * 9.5 dB gain * 46% PAE * 3.3 V, 135 mA, 5.825 GHz at linear mode * 11.5 dB small signal gain * Pout = 16 dBm at 5.6% EVM * 34 dBm OIP3 at 2.7 V Features * Unconditionally stable * Single +3.3 V operation * Small package size - 2.0 x 2.0 x 0.75 mm3 * Point MTTF > 300 years [2] * MSL-1 and Pb-free and Halogen-free * Tape-and-reel packaging option available Applications The MGA-545P8 is ideal for use as IF Amplifier, driver amplifier and power amplifier in: * 3-4 GHz fixed wireless access (WLL) * 5-6 GHz fixed wireless access (HiperLAN/UNII) * 5-6 GHz WLAN 802.11a NIC and AP * Other applications in the 50 MHz to 7 GHz frequency range
Notes: 1. Enhancement mode technology employs a single positive Vgs, eliminating the need of negative gate voltage associated with conventional depletion mode devices. 2. Refer to reliability datasheet for detailed MTTF data. 3. Conform to JEDEC reference outline MO229 for DRP-N.
Description Agilent's MGA-545P8 is an economical, low current, medium power, easy-to-use GaAs MMIC amplifier that offers excellent power output at 5.8 GHz. Although optimized for 5.8 GHz applications, the MGA-545P8 is suitable for other applications in the 50 MHz to 7 GHz frequency range. With the addition of a simple input match, the MGA-545P8 offers a small signal gain of 11.5 dB, a saturated power output of 22 dBm and a saturated gain of 9.5 dB at Pin Connections and Package Marking
PIN 8 PIN 7 (OUT) PIN 6 PIN 5
SOURCE (THERMAL/RF GND)
5.8 GHz. The MGA-545P8 has a nominal current consumption of 92 mA in saturated mode and 135 mA in linear mode at a device voltage of 3.3 V with power added efficiency of 46% in saturated mode. The MGA-545P8 is housed in the 2X2 mm-8L LPCC package. This package offers good thermal dissipation and very good high frequency characteristics making it appropriate for medium power applications through 7 GHz. Simplified Schematic
PIN 1 PIN 2 (IN) PIN 3 PIN 4
BIAS FET OUTPUT & Vd
INPUT
BOTTOM VIEW
PIN 1 IN PIN 3 PIN 4
PIN 8 OUT
4Tx
PIN 6 PIN 5
RF GND
TOP VIEW
Note: Package marking provides orientation and identification. "4T"= Device Code "x" = Date code indicates the month of manufacture.
Attention: Observe precautions for handling electrostatic sensitive devices. ESD Machine Model (Class A), ESD Human Body Model (Class 1A) Refer to Agilent Application Note A004R: Electrostatic Discharge, Damage and Control.
MGA-545P8 Absolute Maximum Ratings[1] Parameter Vd Pin jc Tj TSTG Device Voltage, RF output to ground CW RF Input Power Thermal Resistance
[2]
Units V dBm C/W W C C
Absolute Maximum 5.0 20 124 0.8 150 -65 to 150
Pdiss Total Power Dissipation[3] Junction Temperature Storage Temperature
Notes: 1. Operation of this device in excess of any of these limits may cause permanent damage. 2. Thermal resistance measured using 150C Liquid Crystal Measurement Technique. 3. Board (package belly) temperature Tb is 25C. Derate 8 mW/C for Tb > 51C.
0.01 F
1000 pF
VDD
10 pF
50 RF INPUT 10 pF
1 2 3 4
8
4.7 nH 12 pF 50 RF OUTPUT OPEN-CIRCUITED STUB (34 mil x 72 mil)
4Tx
7 6 5
Figure 1. Production test circuit. This circuit represents a match for maximum gain and saturated power.
0.01 F 12 pF 1000 pF 10 pF 4.7 nH
CONTACTOR
10 pF
Figure 2. Close-up of production test board. Rogers 4350 Er = 3.48 0.05, thickness = 10 mils.
2
MGA-545P8 Electrical Specifications Tc = 25C, Vd = 3.3 V, unless otherwise noted Symbol Gtest_sat Parameter and Test Condition Gain in test circuit at saturation For all frequencies refer to note [3] unless noted otherwise f = 1.0 GHz f = 2.0 GHz f = 3.0 GHz f = 4.0 GHz f = 5.0 GHz f = 5.825 GHz[1] f = 6.0 GHz f = 1.0 GHz f = 2.0 GHz f = 3.0 GHz f = 4.0 GHz f = 5.0 GHz f = 5.825 GHz[1] f = 6.0 GHz f = 5.825 GHz[1] f = 5.825 GHz[1] f = 5.825 GHz[1] f = 1.0 GHz f = 2.0 GHz f = 3.0 GHz f = 4.0 GH f = 5.0 GHz f = 5.825 GHz[2] f = 6.0 GHz f = 1.0 GHz f = 2.0 GHz f = 3.0 GHz f = 4.0 GHz f = 5.0 GHz f = 5.825 GHz[1] f = 6.0 GHz f = 5.725 GHz[1] f = 5.725 GHz[2] f = 1.0 GHz f = 2.0 GHz f = 3.0 GHz f = 4.0 GHz f = 5.0 GHz f = 5.825 GHz[2] f = 6.0 GHz Units dB Min. Typ. 20.0 16.3 13.4 11.6 10.05 9.5 8.7 22.4 18.6 15.9 13.5 12 11.5 11.3 22 92 127 21.5 21.7 21.3 21.8 21.2 21.0 20.6 46.3 46.0 48 44 45 46 47 34 5.6 2.6 2.7 2.9 3.3 3.6 4.4 5.2 - Max.
8.5 dB
10.5
Gtest_ss
Gain in test circuit at small signal For all frequencies refer to note [3] unless noted otherwise
10.5 dBm mA mA dBm 21.5 80 110
13.8 - 115 145
Psat Ids_sat Idss P1dB
Pout at 2.5 dB gain compression Drain Current at saturation Drain Current at small signal Output Power at 1 dB compression point For all frequencies refer to note [3] unless noted otherwise
PAE
Power Added Efficiency at Psat[4] For all frequencies refer to note [3] unless noted otherwise
%
40 dBm % dB 31
OIP3 EVM NF
Output Third Order Intercept Point [2.7 V] Error Vector Magnitude Pout = 16 dBm; 54 Mbps data rate Noise Figure For all frequencies refer to note [3] unless noted otherwise.
3
Notes: 1. Measurements made on a fixed tuned production test board (figure 1), which was optimized for gain and saturated power. Excess circuit losses had been de-embedded from actual measurement. Typical data based on at least 500 parts sample size from 3 wafer lots. Future wafers allocated to this product may have nominal values anywhere within the upper and lower spec limits. 2. Measurement was taken on demo board at which it was tuned for maximum gain and saturated power. Refer to application note. 3. Measurement was done in a 50 microstrip line, which was tuned for maximum gain and saturated power for each frequency with external double stub tuners. Pout - Pin 4. Power Added Efficiency at Psat is calculated using the following formula: pa = Pout = Psat in watts Vdd x Id Pin = Input drive power in watts Vdd = 3.3 V Id = Ids_sat in Ampere
MGA-545P8 Typical Performance, Tc = 25C, Vd = 3.3 V unless stated otherwise.
24 22 20 2.7 V 3.0 V 3.3 V 4.0 V
25 23 21
22 20 18 2.7 V 3.0 V 3.3 V 4.0 V
SSGAIN (dB)
SSGAIN (dB)
G-SAT (dB)
19 17 15 13 11
18 16 14 12 10 1 2 3 4 5
-40C 25C 85C
16 14 12 10 8
9
6 7
7
1
2
3
4
5
6
7
6 1
2
3
4
5
6
7
FREQUENCY (GHz)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 3. Small signal gain vs. frequency and voltage[1,5].
Figure 4. Small signal gain vs. frequency and temperature[1,5].
Figure 5. Saturated gain vs. frequency and voltage[2,3,5].
26
24
26 24
24
23
22
OP1dB (dBm)
P-SAT (dBm)
P_sat (dBm)
22 20 18 16 14 1 2.7 V 3.0 V 3.3 V 4.0 V 2 3 4 5 6 7
22
20 2.7 V 3.0 V 3.3 V 4.0 V 2 3 4 5 6 7
18
21
-40C 25C 85C 1 2 3 4 5 6 7
16 1
20
FREQUENCY (GHz)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 6. Saturated power vs. frequency and voltage[2,3,5].
Figure 7. Saturated power vs. frequency and temperature[2,3,5].
Figure 8. Output power at 1 dB gain compression vs. frequency and voltage[2,5].
60 55 50 PAE (%) 45 40 35 30 25 1 2 3 4 5 2.7 V 3.0 V 3.3 V 4.0 V 6 7
NF (dB)
6 5
35 34 33
OUTPUT IP3 (dBm)
4 3 2 1 0 1 2.7 V 3.0 V 3.3 V 4.0 V 2 3 4 5 6 7
32 31 30 29 28 27 26 25 2.3 2.6 2.9 3.2 3.5 3.8 4.1 4.4 5.725 GHz
FREQUENCY (GHz)
FREQUENCY (GHz)
VOLTAGE (V)
Figure 9. Power added efficiency vs. frequency and voltage[2,3,5].
Figure 10. Noise figure vs. frequency and voltage[2,5].
Figure 11. OIP3 vs. voltage at 5.725 GHz[4,5].
4
155 145
150
110
DEVICE CURRENT (mA)
DEVICE CURRENT (mA)
140
100
135 125 115 105 95 85 75 0 2 2.7 V 3.0 V 3.3 V 4.0 V 4 6 8 10 12 14
130
Idsat (mA)
-40C 25C 85C 2.7 3.0 3.3 3.6 3.9 4.2
90
120
110
80 -40C 25C 85C 70 2.4 2.7 3.0 3.3 3.6 3.9 4.2
100 2.4
Pin (dBm)
VOLTAGE (V)
VOLTAGE (V)
Figure 12. Device current vs. Pin and voltage[4,5].
Figure 13. Id vs. voltage and temperature (no RF drive).
Figure 14. Saturated Id vs. voltage and temperature[3,4].
12 10 2.7 V 3.0 V 3.3 V 4.0 V
10 9 8 2.7 V 3.0 V 3.3 V 4.0 V
EVM (64QAM;%)
8 6 4 2 0 -10
EVM (64QAM;%)
7 6 5 4 3 2 1
-5
0
5
10
15
20
0 -20
-15
-10
-5
0
5
10
Pout (dBm)
Pin (dBm)
Figure 15. EVM(64QAM) vs. Pout and voltage at 5.725 GHz[4].
Figure 16. EVM(64QAM) vs. Pin and voltage at 5.725 GHz[4].
Notes: 1. Measurement was done in a 50 microstrip line with input and output tuned for maximum gain using double stub-tuners. 2. Measurement was done in a 50 microstrip line with input tuned for gain and output tuned for maximum Psat using double-stub tuners. 3. Measured at 2.5 dB gain compression. 4. Measurement at 5.825 GHz were made on a fixed tuned demo board that was tuned for maximum saturated output power and maximum gain. 5. Circuit losses have been de-embedded from actual measurement.
5
MGA-545P8 Typical Scattering Parameters Tc = 25C, Vd = 3.3 V, Zo = 50 Freq. GHz 0.05 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.5 1.9 2.0 2.4 3.0 4.0 5.0 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 6.0 6.5 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 6 S11 Mag 0.08 0.11 0.17 0.25 0.30 0.35 0.40 0.44 0.47 0.50 0.52 0.59 0.61 0.62 0.61 0.62 0.54 0.38 0.34 0.30 0.26 0.21 0.15 0.11 0.08 0.06 0.06 0.10 0.43 0.69 0.87 0.91 0.93 0.90 0.95 0.96 0.93 0.91 0.96 0.95 0.96 Ang -144.5 -140.5 -132.4 -133.4 -137.1 -139.0 -144.4 -149.7 -153.9 -158.5 -162.8 179.0 166.5 163.8 153.8 139.3 116.5 87.9 83.6 79.2 75.1 70.9 71.0 82.8 99.7 115.1 161.8 -161.5 -166.1 165.0 117.4 97.6 77.7 63.6 50.7 41.1 30.7 27.9 22.0 14.4 8.0 dB 24.4 24.3 24.0 23.7 23.3 22.9 22.4 21.9 21.4 20.9 20.4 18.2 16.7 16.2 14.9 13.5 11.9 11.4 11.3 11.3 11.2 11.1 11.1 10.9 10.9 10.9 10.8 10.8 9.7 6.2 -3.7 -19.0 -19.3 -14.1 -12.1 -12.2 -12.4 -13.1 -12.9 -13.6 -13.6 S21 Mag 16.57 16.33 15.85 15.34 14.65 13.96 13.26 12.51 11.80 11.11 10.51 8.09 6.81 6.47 5.58 4.71 3.95 3.70 3.67 3.66 3.62 3.61 3.59 3.53 3.51 3.49 3.48 3.46 3.05 2.05 0.66 0.11 0.11 0.20 0.25 0.25 0.24 0.22 0.23 0.21 0.21 Ang 174.5 169.7 160.1 151.5 144.1 136.5 131.2 124.6 119.2 113.9 109.3 89.5 78.0 75.8 65.4 53.0 28.6 0.5 -3.4 -7.2 -11.1 -15.5 -19.6 -23.0 -26.0 -29.2 -33.2 -39.1 -71.8 -104.8 -149.2 -172.2 -6.4 -20.6 -38.3 -54.0 -59.4 -66.6 -79.5 -88.3 -88.0 dB -32.0 -31.9 -31.9 -31.9 -31.9 -31.8 -31.8 -31.8 -31.6 -31.6 -31.4 -30.6 -29.9 -29.7 -28.9 -27.6 -25.5 -23.5 -23.4 -23.3 -23.2 -23.1 -23.1 -23.0 -22.9 -22.8 -22.9 -23.0 -25.4 -32.3 -33.2 -26.8 -23.9 -22.9 -21.8 -21.4 -21.1 -20.6 -20.4 -19.8 -19.1 S12 Mag 0.025 0.025 0.025 0.026 0.025 0.026 0.026 0.026 0.026 0.026 0.027 0.029 0.032 0.033 0.036 0.042 0.053 0.067 0.068 0.069 0.069 0.070 0.070 0.071 0.072 0.073 0.072 0.071 0.054 0.024 0.022 0.046 0.064 0.072 0.081 0.085 0.088 0.093 0.096 0.103 0.111 S22 Ang 0.3 0.0 -0.7 -0.6 1.0 2.4 3.7 4.7 5.8 7.2 7.8 13.2 15.6 16.2 18.2 17.6 10.8 -6.5 -9.5 -12.3 -16.3 -18.8 -22.9 -25.6 -27.7 -30.4 -33.4 -38.4 -70.7 -106.7 55.7 38.8 18.8 8.2 -5.1 -15.7 -25.2 -29.4 -40.0 -44.6 -56.1 Mag 0.04 0.04 0.04 0.04 0.04 0.06 0.07 0.07 0.07 0.07 0.08 0.10 0.11 0.11 0.12 0.14 0.19 0.23 0.24 0.25 0.26 0.27 0.28 0.29 0.29 0.30 0.34 0.36 0.47 0.50 0.46 0.42 0.41 0.40 0.42 0.46 0.49 0.53 0.57 0.61 0.62 Ang 6.5 3.9 -1.4 -2.7 -4.6 -10.5 -13.2 -17.5 -22.9 -28.3 -31.7 -48.5 -60.5 -67.5 -73.8 -74.6 -89.2 -98.4 -99.5 -100.6 -101.8 -103.9 -106.9 -108.7 -109.9 -108.9 -109.1 -118.8 -136.8 -157.6 172.0 156.3 143.1 129.3 117.2 102.6 87.6 80.2 70.3 62.9 50.3 K Factor 1.40 1.40 1.40 1.39 1.40 1.40 1.38 1.39 1.38 1.40 1.40 1.42 1.45 1.49 1.56 1.54 1.63 1.68 1.71 1.75 1.80 1.83 1.88 1.91 1.91 1.91 1.90 1.91 2.20 4.22 6.38 13.14 8.26 5.90 2.17 1.72 3.00 3.56 1.74 1.84 1.55
MGA-545P8 Typical Noise Parameters at Tc = 25C, Vd = 3.3 V Frequency GHz 1.0 2.0 3.0 4.0 5.0 6.0 7.0 Fmin dB 2.1 2.4 2.5 2.9 3.2 3.5 4.4 Mag 0.46 0.44 0.44 0.39 0.26 0.13 0.38 Gopt Ang -144 -133 -123 -100 -77 -77 -158 Rn/50 0.15 0.20 0.27 0.43 0.51 0.48 0.28
Device Models Refer to Agilent's Web Site www.agilent.com/view/rf Ordering Information Part Number MGA-545P8-TR1 MGA-545P8-TR2 MGA-545P8-BLK No. of Devices 3000 10000 100 Container 7" Reel 13" Reel Antistatic Bag
2x2 LPCC (JEDEC DFP_N) Package Dimensions
D1 P PIN 1 PIN 1 1 2 E1 R e 3 b 4
D
8 7 E 6 5
DIMENSIONS SYMBOL A A1 A2 b D D1 E E1 e P L MIN. 0.7 0 0.225 1.9 0.65 1.9 1.45 0.20 0.35 NOM. 0.75 0.02 0.203 REF 0.25 2 0.8 2 1.6 0.50 BSC 0.25 0.40 MAX. 0.8 0.05 0.275 2.1 0.95 2.1 1.75 0.30 0.45
4Tx
L
BOTTOM VIEW
TOP VIEW
A A2 A1
A
END VIEW
SIDE VIEW
7
PCB Land Pattern and Stencil Design
2.80 (110.24)
RF TRANSMISSION LINE
;; ;;
PIN 1
0.70 (27.56) 0.25 (9.84) 0.25 (9.84)
0.20 (7.87)
0.50 (19.68) 1.60 (62.99) 0.28 (10.83)
SOLDER MASK
0.80 (31.50)
0.60 (23.62)
0.15 (5.91)
0.55 (21.65)
NOTE: DIMENSIONS ARE IN MILLIMETERS
;; ;; ;;;; ;;; ;;; ;;; ;;;
2.72 (107.09) 0.63 (24.80) 0.22 (8.86) PIN 1 0.72 (28.35) 0.63 (24.80)
0.32 (12.79) 0.50 (19.68) 1.54 (60.61)
0.25 (9.74)
PCB LAND PATTERN (TOP VIEW)
STENCIL LAYOUT (TOP VIEW)
Device Orientation
REEL
4 mm
CARRIER TAPE USER FEED DIRECTION COVER TAPE
8 mm 4Tx 4Tx 4Tx 4Tx
8
Tape Dimensions
P D
P0
P2
E
F W
D1
t1
Tt
10MAX.
K0
10MAX.
A0
B0
DESCRIPTION CAVITY LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER DIAMETER PITCH POSITION WIDTH THICKNESS COVER TAPE DISTANCE WIDTH TAPE THICKNESS CAVITY TO PERFORATION (WIDTH DIRECTION) CAVITY TO PERFORATION (LENGTH DIRECTION)
SYMBOL A0 B0 K0 P D1 D P0 E W t1 C Tt F P2
SIZE (mm) 2.30 0.05 2.30 0.05 1.00 0.05 4.00 0.10 1.00 0.25 1.50 0.10 4.00 0.10 1.75 0.10 8.00 + 0.30 8.00 - 0.10 0.254 0.02 5.4 0.10 0.062 0.001 3.50 0.05 2.00 0.05
SIZE (INCH) 0.091 0.004 0.091 0.004 0.039 0.002 0.157 0.004 0.039 0.002 0.060 0.004 0.157 0.004 0.069 0.004 0.315 0.012 0.315 0.004 0.010 0.0008 0.205 0.004 0.0025 0.0004 0.138 0.002 0.079 0.002
PERFORATION
CARRIER TAPE
9
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For product information and a complete list of distributors, please go to our web site. For technical assistance call: Americas/Canada: +1 (800) 235-0312 or (916) 788-6763 Europe: +49 (0) 6441 92460 China: 10800 650 0017 Hong Kong: (+65) 6756 2394 India, Australia, New Zealand: (+65) 6755 1939 Japan: (+81 3) 3335-8152 (Domestic/ International), or 0120-61-1280 (Domestic Only) Korea: (+65) 6755 1989 Singapore, Malaysia, Vietnam, Thailand, Philippines, Indonesia: (+65) 6755 2044 Taiwan: (+65) 6755 1843 Data subject to change. Copyright (c) 2004 Agilent Technologies, Inc. Obsoletes 5988-9629EN November 1, 2004 5989-1810EN

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